SMTC Semiconductor Manufacturing and Testing Center

SMTC

SVNIT, SURAT

P. Das, “High-κ Oxide Charge Engineering on GaN for”, Journal of Electronic Materials, March 2024, https://doi.org/10.1007/s11664-024-11074-0 , IF 2.1
A. Gupta, D. Rotake, and A. Darji, "Ultra-sensitive detection of lead ions through portable sensor technology for enhanced environmental monitoring," in IEEE Sensors Letters, 2024.
P. Das, H. Finch, H. J. Edwards, S. Almalki, V. R. Dhanak, R. Mahapatra, and I. Z. Mitrovic, “Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications”, Semiconductor Science and Technology, May 2024, https://doi.org/10.1088/1361-6641/ad4abe , IF 1.9
Unveiling the Potential of Cs₃Sb₂Cl_xI_9-x-based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation, Advanced Theory and Simulations, 2024 (IF: 3.3)
A DFT Study of the Adsorption Behavior and Sensing Properties of CO gas on Monolayer MoSe₂ in CO₂ rich environment: Journal of Molecular Modeling ,2024 (IF: 2.2)
Comprehensive modeling of high-performance all-inorganic Cs₂TiBr₆-based perovskite solar cells: Physica Status Solidi B: Basic Solid State Physics,2024 (IF: 2.8)
Bandgap Engineering of Earth-abundant Cu₂BaSn(S_1-xSe_x)₄ for Improved Photovoltaic Performance: A Systematic Approach to Double Grading: Solar Energy Materials and Solar Cells, 269,112792, 2024. (IF: 6.9)
Elucidating the potential strategies for performance improvement of CBTSSe-based solar cells: A pathway towards 20% efficiency: Energy Technology, 2301198, 2024. (IF: 3.8)
DFT calculations for temperature stable quantum capacitance of VS₂ based electrodes for supercapacitors: IEEE Transactions on Nanotechnology, 23, 132-138, 2024. (IF: 2.4)
Unraveling the Potential Pathways for Improved Performance of EDA_0.01(GA_0.06(FA_0.8Cs_0.2)_0.94)_0.98SnI₂Br-based Solar Cells: Energy Technology, 2300876, 2024. (IF: 3.8)
S. Srivastava, S. M, and Abhishek Acharya, "Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective," in IEEE Transactions on Device and Materials Reliability, vol. 23, no. 1, pp. 58-63, March 2023, doi: 10.1109/TDMR.2022.3227942.
Unveiling the Potential of Bismuth Oxy-Iodide (BiOI) based Photovoltaic Device for Indoor Light Harvesting: IEEE Transactions on Electron Devices, 70, 10, 5690-5695, (2023). (IF: 3.22)
Comparative Analysis of Gate Structure Dependent FET-Based Biosensor: Materials Today Communications, 35, 106301, (2023). (IF: 3.8)
Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS₂: Physica Status Solidi B: Basic Solid State Physics, 260, 9, (2023). (IF: 2.8)
Performance Assessment of Pocket Tunnel FET and Accumulation Mode FET for Detection of Streptavidin Protein: Physica Scripta, 98, 11, 115002, (2023). (IF: 2.9)
DFT study about the effect of doping on the properties of GaSb material and designing of a high-efficiency infrared photodetector: Physica Status Solidi B: Basic Solid State Physics, 260, 230299, (2023). (IF: 2.8)
Growth optimization and DFT investigation of doping effect on properties of VS₂ monolayer crystals: The European Physical Journal B, 96, 160, (2023). (IF: 1.6)
Theoretical investigation of electronic, optical properties of doped and defective MoSe₂ monolayers: Bulletin of Materials Science, 46, 121, (2023). (IF: 1.89)
M. Shashidhara, V. Nehra, S. Srivatsava, S. Panwar, and A. Acharya, "Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction," in IEEE Transactions on Electron Devices, vol. 70, no. 3, pp. 1430-1435, March 2023, doi: 10.1109/TED.2023.3237654.
S. Panwar, S. Srivastava, M. Shashidhara, and Abhishek Acharya, "Performance Evaluation of High-κ Dielectric Ferro-Spacer Engineered Si/SiGe Hetero-Junction Line TFETs: A TCAD Approach," in IEEE Transactions on Dielectrics and Electrical Insulation, vol. 30, no. 3, pp. 1066-1071, June 2023, doi: 10.1109/TDEI.2023.3266413.
S. S. Nayak, A. D. Darji, and P. K. Shah, "Identification of Parkinson’s disease from speech signal using machine learning approach," International Journal of Speech Technology, vol. 26, no. 4, pp. 981-990, 2023.
G. Singh, A. D. Darji, J. N. Sarvaiya, and S. Patnaik, "Preprocessing and frame level classification framework for cardiac phase detection in 2D echocardiography," 2023.
M. Shashidhara, S. Srivastava, S. Panwar, and Abhishek Acharya, "Spin-Orbit Torque Magnetic Tunnel Junction based on 2-D Materials: Impact of Bias-Layer on Device Performance", Solid State Electronics, Elsevier, August, 2023. https://doi.org/10.1016/j.sse.2023.108757
S. Srivastava, S. Panwar, M. Shashidhara, S. Yadav, and Abhishek Acharya, "Understanding the Impact of Extension Region on Stacked Nanosheet FET: Analog Design Perspective", Solid State Electronics, Elsevier, August, 2023.
S. Panwar, M. Shashidhara, S. Srivastava, D. Joshi, and Abhishek Acharya, "Performance Optimization of Epitaxial-Layer Based Si/SiGe Hetero-junction Area Scaled Tunnel FET Label-Free Biosensors Considering Steric Hindrance", Solid State Electronics, Elsevier, 2023.
Deepak Joshi, Satyabrata Dash, S. Reddy, et al., “Multi-objective Hybrid Particle Swarm Optimization and its Application to Analog and RF Circuit Optimization”, Circuits Systems Signal Process, 2023. DOI: 10.1007/s00034-023-02342-1.
Shail Pandey, Akash Agarwal, and Deepak Joshi, “Rotating magnetic field configuration for controlled particle flux in material processing applications”, International Journal of Materials Research, 2023. DOI: 10.1515/ijmr-2021-8756.
S. Srivastava, S. Panwar, and Abhishek Acharya, "Proposal and Investigation of Area Scaled Nanosheet Tunnel FET: A Physical Insight," in IEEE Transactions on Electron Devices, vol. 8, Aug. 2022, doi: 10.1109/TED.2022.3184915.
Design Analysis of Ohmic Junction Based Tunnel FET: Silicon, 1-8, (2022). (IF: 2.94)
Design Investigation of Charge Plasma Tunnel FET with Vertical Source: Silicon, 12-18, (2022). (IF: 2.94)
A. D. Darji, D. Joshi, A. Joshi, and R. Sheriff, "Advances in VLSI and Embedded Systems: Select Proceedings of AVES 2021," Springer Nature, 2022.
K. C. Pathak, A. D. Darji, J. N. Sarvaiya, Z. Bhatt, A. Gangadwala, and S. Diwan, "Design of error-tolerant and low-power approximate full adder," in Microelectronics, Communication Systems, Machine Learning and Internet of ..., 2022.
V. Solanki, R. R. Kumar, P. Ghagare, and A. D. Darji, "Low power and area efficient approximate 2D-DCT architecture for wireless capsule endoscopy," in 2022 35th International Conference on VLSI Design and 2022 21st ..., 2022.
Y. M. Ashoka Raja, P. K. Shah, and A. D. Darji, "FPGA-based display driver design with remote terminal unit (RTU) support using MODBUS," in Recent Trends in Electronics and Communication: Select Proceedings of VCAS ..., 2022.
Awadhiya, B., Yadav, S., & Acharya, A. Interface Trap Charges Analysis on DC and High Frequency Characteristics of UTBB-FDSOI FET. Silicon (2022). https://doi.org/10.1007/s12633-022-02053-3
P. H. Prajapati, D. R. Khambe, and A. D. Darji, "FPGA Implementation of Modified Clipping Method for Impulsive Noise Cancellation," in Advances in Computational Intelligence and Communication Technology (CICCT), 2021.
Improving the Cu2ZnSn(S,Se)4-based photovoltaic conversion efficiency by back contact modification: IEEE Transactions on Electron Devices, 66, 6, 2748-2752, (2021). (IF: 3.22)
Insights into the sputter-instigated valence plasmon oscillations in CIGSe thin films: Surfaces and Interfaces Interfaces, 25, 101146, (2021). (IF: 6.2)
Numerical Simulation: Design of high-efficiency planar p–n homojunction perovskite solar cells: IEEE Transactions on Electron Devices, 68, 5, 2360-2364, (2021). (IF: 3.22)
A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor Based Biosensor: IEEE Sensors, 21, 3, 3201-3209, (2021). (IF: 4.32)
Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell: Optical Materials, 112, 111715, (2021). (IF: 3.9)
P. Tiwari and A. D. Darji, "Performance Analysis of ML Algorithms on Speech Emotion Recognition," in Advances in Computational Intelligence and Communication Technology (CICCT), 2021.
N. Chatterji, S. Bhatia, A. Kumar, A. Antony, and P. R. Nair, "Material-and Process-Tolerant High-Efficiency Solar Cells With Dynamic Recovery of Performance," in IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1676-1681, 2021.
Abhishek Acharya, “Investigation of Variability in Device Design on Saturation Characteristics of Nanowire Tunnel FETs”, Silicon, Springer, May. 2021.
Atul Kumar Yadav, Sourabh Panwar, Shobhit Srivastava, and Abhishek Acharya, "Performance Analysis of III-V Hetero/Homojunction TFETs: an Analog Circuit Design Perspective", Silicon, Springer, June 2021. DOI: 10.1007/s12633-022-01889-z.
Numerical simulation: Design of high-efficiency planar pn homojunction perovskite solar cells - BS Sengar, V Garg, A Kumar, P Dwivedi IEEE Transactions on Electron Devices 68 (5), 2360-2364, Cited by: 36, Year: 2021
Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell - V Garg, A Kumar, P Sharma Optical Materials 122, 111715, Cited by: 19, Year: 2021
Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification - BS Sengar, V Garg, G Siddharth, A Kumar, SK Pandey, M Dubey, ... IEEE Transactions on Electron Devices 68 (6), 2748-2752, Cited by: 19, Year: 2021
S. Biswas, A. D. Paul, P. Das, P. Tiwary, H. J. Edwards, V. R. Dhanak, I. Z. Mitrovic, and R. Mahapatra, “Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs”, IEEE Transactions on Electron Devices, v. 68, 2021, pp. 3787-3793, IF 2.917
A. D. Paul, S. Biswas, P. Das, H. J. Edwards, A. Dalal, S. Maji, V. R. Dhanak, A. Mondal, and R. Mahapatra, “Improved resistive switching characteristics of Ag/Al: HfOx/ITO/PET ReRAM for flexible electronics application”, Semiconductor Science and Technology, v. 36, 2021, pp. 065006 (8pp), IF 2.508
S. Maji, A. D. Paul, P. Das, S. Chatterjee, P. Chatterjee, V. R. Dhanak, A. K. Chakraborty, and R. Mahapatra, “Improved Resistive Switching Performance of Graphene Oxide Based Flexible ReRAM with HfOx Buffer Layer”, Journal of Materials Science: Materials in Electronics, v. 32, 2021, pp. 2936-2945, IF 2.478
P. H. Prajapati and A. D. Darji, "FPGA implementation of MRMN with step-size scaler adaptive filter for impulsive noise reduction," Circuits, Systems, and Signal Processing, vol. 39, no. 7, pp. 3682-3710, Jun. 2020.
D. Rotake, A. D. Darji, and N. Kale, "Ultrasensitive detection of Cadmium ions using a microcantilever," Beilstein Journal of Nanotechnology (preprint), 2020.
D. R. Rotake, A. D. Darji, and N. S. Kale, "Design of microfluidic experimental setup for the detection of heavy metal ions using piezoresistive biomems sensor," Microelectronics International, vol. 37, no. 1, pp. 10-28, Dec. 2020.
D. Rotake and A. D. Darji, "Design and reliability testing of microcantilever-based piezoresistive sensor for BioMEMS application," 2020.
Shivendra Yadav, Anju, and Sukeshni Tirkey, “A Dielectric Modulated Biosensor for SARS-CoV-2”, IEEE Sensor Journal, Accepted. doi: 10.1109/JSEN.2020.3019036, Aug. 2020.
Shivendra Yadav, Anuj, Anju Gedam, Guru Prasad Mishra, and Mohd. Aslam, “Linearity/Intermodulation Distortion Analysis of Tunneling and Thermionic Emission Mechanisms; Design Proposal and High Frequency Investigation”, Semiconductor Science and Technology, vol. 35, no. 10, Sep. 2020.
Investigation of DIBS-deposited CdZnO/ZnO-based Multiple Quantum Well for Large-area Photovoltaic Application: IEEE Transactions on Electron Devices, 67, 12, 5587-5592, (2020). (IF: 3.22)
Analytical Performance Analysis of CdZnO/ZnO-based Multiple Quantum Well Solar Cell: IEEE Transactions on Electron Devices, 67, 3, 1047-1051, (2020). (IF: 3.22)
A new simulation approach of transient response to enhance the selectivity and sensitivity in tunneling field effect transistor-based biosensor - P Dwivedi, R Singh, BS Sengar, A Kumar, V Garg IEEE Sensors Journal 21 (3), 3201-3209, Cited by: 37, Year: 2020
P. Das, L. A. H. Jones, J. T. Gibbon, V. R. Dhanak, T. P. Manzanera, J. W. Roberts, R. Potter, P. R. Chalker, S.-J. Cho, I. G. Thayne, R. Mahapatra, and I. Z. Mitrovic, “Band Line-up Investigation of Atomic Layer Deposited Ti-Al-O and Ga-Al-O on GaN”, ECS Journal of Solid State Science and Technology, v. 9, 2020, pp. 063003 (1-8), IF 2.070
A. D. Paul, S. Biswas, P. Das, H. J. Edwards, V. R. Dhanak, and R. Mahapatra, “Effect of Aluminum Doping on Performance of HfOₓ-Based Flexible Resistive Memory Devices”, IEEE Transactions on Electron Devices, v. 67, 2020, pp. 4222-4227, IF 2.917
Abhishek Acharya, Abhishek B. Solanki, S. Glass, Q. T. Zhao, and Bulusu Anand, “Impact of gate-source overlap on Device/Circuit Analog Performance of Line TFETs”, IEEE Trans. on Electron Devices, vol. 66, no. 9, pp. 4081-4086, Sep. 2019.
Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell: IEEE Transactions on Electron Devices, 66 (8), 3399-3404, (2019). (IF: 3.22)
Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells: Solar Energy, 178, 114-124, (2019). (IF: 7.18)
Investigation of valance electron excitation and plasmonic enhancement in sputter grown NMZO thin films: For energy harvesting applications: Optical Materials, 88, 372-377, (2019). (IF: 3.9)
Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics: Semiconductor Science and Technology, 34, 3, 035014, (2019).
J. Pathak and A. D. Darji, "Analysis of 14nm technology node In_0.53Ga_0.47As nFinFET integrated with In_0.52Al_0.48As cap layer for high-speed circuits," International Journal of Electronics, vol. 106, no. 10, pp. 1514-1529, Feb. 2019.
J. Pathak and A. D. Darji, "Impact of Interface Traps and Parasitic Capacitance on Gate Capacitance of In_0.53Ga_0.47As-FinFET for sub 14nm Technology Node," International Journal of Nanoelectronics & Materials, vol. 12, no. 3, 2019.
J. Pathak and A. D. Darji, "Assessment of interface traps in In_0.53Ga_0.47As FinFET with gate-to-source/drain underlap for sub-14nm technology node to impede short channel effect," IET Circuits, Devices & Systems, vol. 13, no. 4, pp. 428-434, Jun. 2019.
J. Pathak and A. D. Darji, "Curtailment of Propagation Delay in In_0.53Ga_0.47As Sub-14 nm FinFET by Integration of Doped/Undoped In_0.52Al_0.48As Barrier Layer," Journal of Nanoelectronics and Optoelectronics, vol. 14, no. 4, pp. 505-, 2019.
N. Chatterji, A. Antony, and P. R. Nair, "Temperature coefficient of silicon-based carrier selective solar cells," in IEEE Journal of Photovoltaics, vol. 9, no. 3, pp. 583-590, 2019.
I. M. Khorakiwala, K. K. Markose, A. Kumar, N. Chatterji, P. Nair, and A. Antony, "Studies on n-Type a-Si: H and the Influence of ITO Deposition Process on Silicon Heterojunction Solar Cells," in The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, pp. 461-467, 2019.
N. Chatterji and P. R. Nair, "Electron versus hole extraction: Self doping induced performance bottleneck in perovskite solar cells," in IEEE Electron Device Letters, vol. 40, no. 11, pp. 1784-1787, 2019.
Shivendra Yadav, Jyoti Patel, and Dheeraj Sharma, “A Novel Proposal for Enhancing TFET Performance and Its Reliability Issues”, Journal of Nanoelectronics and Optoelectronics, vol. 14, no. 2, pp. 238-246, Feb. 2019, DOI: https://doi.org/10.1166/jno.2019.2483.
Shivendra Yadav, Madhuri Vemulapaty, Dheeraj Sharma, Anju Gedam, and Neeraj Sharma, “A Design structure of Tunnel FET by Combining Thermionic Emission with Tunneling Phenomenon”, Micro & Nano Letters, vol. 14, no. 4, pp. 450-454, Apr. 2019, DOI: 10.1049/mnl.2018.5548.
Shivendra Yadav, Alish Pamnani, Dheeraj Sharma, and Atul Kumar, “A Novel Design Approach of Charge Plasma Tunnel FET for Radio Frequency Applications”, Journal of Semiconductors, vol. 40, no. 5, pp. 052901, May 2019, DOI: 10.1088/1674-4926/40/5/052901.
Mohd. Aslam, Girjesh Korram, Dheeraj Sharma, Shivendra Yadav, and Neeraj Sharma, “DC Performance Enhancement of PNPN Hetero Dielectric Box Tunnel Field Effect Transistor for Low Power Applications”, Journal of Computational Electronics, vol. 19, no. 1, pp. 1-6, Dec. 2019, DOI: https://doi.org/10.1007/s10825-019-01427-y.
Analytical study of performance parameters of InGaN/GaN multiple quantum well solar cell - G Siddharth, V Garg, BS Sengar, R Bhardwaj, P Kumar, S Mukherjee IEEE Transactions on Electron Devices 66 (8), 3399-3404, Cited by: 21, Year: 2019
P. Das, S. N. Supardan, J. D. Major, A. Hannah, Z. H. Zaidi, R. Mahapatra, K. B. Lee, R. Valizadeh, P. A. Houston, S. Hall, V. R. Dhanak, and I. Z. Mitrovic, “Band alignments of sputtered dielectrics on GaN”, Journal of Physics D: Applied Physics, v. 53, 2019, pp. 063003 (1-10), IF 3.207 (Joint first-author)
S. Maji, S. Samanta, P. Das, S. Maikap, V. R. Dhanak, I. Z. Mitrovic, and R. Mahapatra, “Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices”, Journal of Vacuum Science & Technology B, v. 37, 2019, pp. 021204 (1-7), IF 1.416
Abhishek Acharya, Abhishek B. Solanki, Sudeb Dasgupta, and Bulusu Anand, “Drain Current Saturation in Line Tunneling based TFETs: An Analog design Perspective”, IEEE Trans. on Electron Devices, vol. 65, no. 1, pp. 322-330, Jan. 2018.
Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO, ACS Applied Materials and Interfaces, 10, 5464−5474, (2018). (IF: 10.38)
Sputter-instigated plasmon-enhanced optical backscattering layer in ultrathin solar cells: Application of GZO in CIGSe material system, Solar Energy, 174, 35, (2018). (IF: 7.18)
Surface layer investigation of dual ion beam sputtered Cu2ZnSn (S,Se)4 thin film for open-circuit voltage improvement, Journal of Physics D: Applied Physics, 51, 31LT01, 18, (2018). (IF: 3.40)
Band alignment of Cd-free (Zn,Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties, Optical Materials, 84, 351102, 1-10 (2018). (IF: 3.75)
N. Chatterji, A. Antony, and P. R. Nair, "Interface-dependent efficiency tradeoff in Si-based carrier-selective solar cells," in IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2509-2516, 2018.
Shivendra Yadav, Mohd. Aslam, Deepak Soni, and Dheeraj Sharma, “A Novel Hetero-Material Gate-Underlap Electrically Doped TFET for Improving DC/RF and Ambipolar Behavior”, Superlattices and Microstructures, vol. 117, pp. 9-17, Feb. 2018, DOI: https://doi.org/10.1016/j.spmi.2018.02.005.
Shivendra Yadav, Rahul Madhukar, Dheeraj Sharma, Mohd. Aslam, Deepak Soni, and Neeraj Sharma, “A New Structure of Electrically Doped TFET for Improving Electronic Characteristics”, Applied Physics A, vol. 124, no. 7, pp. 517-526, Jul. 2018, DOI: https://doi.org/10.1007/s00339-018-1930-9.
Shivendra Yadav, Alemienla Lemtur, Dheeraj Sharma, Mohd. Aslam, and Deepak Soni, “An Effective Approach to Enhance DC and High Frequency Performance of Electrically Doped TFET”, Micro & Nano Letters, vol. 13, no. 10, pp. 1469-1474, Oct. 2018, DOI: 10.1049/mnl.2018.5072.
Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav, “A Novel Approach for the Improvement of Electrostatic Behavior of Physically Doped TFET by Using Plasma Formation and Shortening of Gate Electrode with Hetero Gate Dielectric", Applied Physics A, vol. 124, pp. 306, Feb. 2018, DOI: https://doi.org/10.1007/s00339-018-1670-x.
Bandi Venkata Chandan, Sushmitha Dasari, Shivendra Yadav, and Dheeraj Sharma, “Approach to Suppress Ambipolarity and Improve RF and Linearity Performances on Electrically Doped Tunnel FET", Micro & Nano Letters, vol. 13, pp. 684-689, Feb. 2018, DOI: 10.1049/mnl.2017.0814.
Deepak Soni, Dheeraj Sharma, Mohd. Aslam, and Shivendra Yadav, “Improvement in Electrostatic Characteristic of Doped TFET by Hole Layer Formation", Journal of Computational Electronics, vol. 17, no. 2, pp. 736-744, Jun. 2018, DOI: https://doi.org/10.1007/s10825-018-1139-3.
Sarthak Gupta, Dheeraj Sharma, Deepak Soni, Shivendra Yadav, Mohd. Aslam, Dharmendra Singh Yadav, Kaushal Nigam, and Neeraj Sharma, “Examination of the Impingement of Interface Trap Charges on Heterogenous Gate Dielectric Dual Material Control Gate Tunnel FET for the Refinement of Device Reliability", Micro & Nano Letters, vol. 13, no. 8, pp. 1192-1196, Aug. 2018, DOI: 10.1049/mnl.2017.0869.
Mohd. Aslam, Dheeraj Sharma, Deepak Soni, Shivendra Yadav, Bhagwan Ram Raad, Dharmendra Singh Yadav, and Neeraj Sharma, “An Effective Design Technique for Improvement of Electrostatics Behavior of Dopingless Tunnel FET: Proposal, Investigation and Optimization", Micro & Nano Letters, vol. 13, no. 10, pp. 1480-1485, Aug. 2018, DOI: 10.1049/mnl.2018.5129.
Dharmendra Singh Yadav, Dheeraj Sharma, Sukeshni Tirkey, Deepak Ganesh Sharma, Shriya Bajpai, Deepak Soni, Shivendra Yadav, Mohd. Aslam, and Neeraj Sharma, “A Novel Hetero-Material Charge Plasma Tunnel FET with High-Frequency and Linearity Analysis for Ultra-Low Power Applications", Micro & Nano Letters, vol. 13, no. 11, pp. 1609-1614, Aug. 2018, DOI: 10.1049/mnl.2018.5075.
Bandi Chandan, Sushmitha Dasari, Kaushal Nigam, Shivendra Yadav, Sunil Pandey, and Dheeraj Sharma, “Impact of Gate Material Engineering on ED-Tunnel FET for Improving DC/Analog-RF/Linearity Performances", Micro & Nano Letters, vol. 13, no. 12, pp. 1653-1656, Dec. 2018, DOI: 10.1049/mnl.2018.5131.
Deepak Soni, Dheeraj Sharma, Mohd. Aslam, and Shivendra Yadav, "Approach for the Improvement of Sensitivity and Sensing Speed of TFET-based Biosensor by Using Plasma Formation Concept", Micro & Nano Letters, vol. 13, no. 12, pp. 1728-1733, Dec. 2018, DOI: 10.1049/mnl.2018.5252.
Mohd. Aslam, Dheeraj Sharma, Shivendra Yadav, Deepak Soni, and Varun Bajaj, "A New Design Approach for Enhancement of DC/RF characteristics with Improved Ambipolar Conduction of Charge Plasma TFET: Proposal, and optimization", Applied Physics A, vol. 124, no. 4, pp. 342, Mar. 2018, DOI: 2018.10.1007/s00339-018-1753-8.
Band alignment of Cd-free (Zn, Mg) O layer with Cu2ZnSn (S, Se) 4 and its effect on the photovoltaic properties - BS Sengar, V Garg, A Kumar, V Awasthi, S Kumar, VV Atuchin, ... Optical Materials 84, 748-756, Cited by: 55, Year: 2018
Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO. - V Garg, BS Sengar, V Awasthi, A kumar, R Singh, S Kumar, C Mukherjee, ... ACS Applied Materials & Interfaces, Cited by: 52, Year: 2018
Enhanced performance of Ag@ ZrO2 nanoparticle-embedded HfO2 resistive random-access memory device - BS Sengar, V Garg, R Singh, A Kumar, SK Pandey, ... Journal of Vacuum Science & Technology B 36 (5), 052202, Cited by: 17, Year: 2018
Satyabrata Dash, Deepak Joshi, Ayushparth Sharma, Gaurav Trivedi, “A hierarchy in mutation of genetic algorithm and its application to multi-objective analog/RF circuit optimization”, Analog Integrated Circuits and Signal Processing, 2018. DOI: 10.1007/s10470-017-1090-4.
Satyabrata Dash, Sukanta Dey, Deepak Joshi, Gaurav Trivedi, “Minimizing area of VLSI power distribution networks using river formation dynamics”, Journal of Systems and Information Technology, 2018. DOI: 10.1108/JSIT-10-2017-0097.
Satyabrata Dash, Deepak Joshi, Gaurav Trivedi, “Multiobjective analog/RF circuit sizing using an improved brain storm optimization algorithm”, Memetic Computing, 2018. DOI: 10.1007/s12293-018-0262-9.
Abhishek Acharya, Sudeb Dasgupta, and Bulusu Anand, “A Novel VDSAT Extraction Method for Tunnel FETs and its Implication to Analog Design”, IEEE Trans. on Electron Devices, vol. 64, no. 2, pp. 629-633, Feb. 2017.
N. Chatterji, A. Antony, and P. R. Nair, "Modeling based screening for optimal carrier selective material for Si based solar cells," in arXiv preprint arXiv:1704.06604, 2017.
Shivendra Yadav, Dheeraj Sharma, Deepak Soni, and Mohd. Aslam, “Controlling of Ambipolarity with Improved RF Performance by Drain/Gate Workfunction Engineering and Using High-k Dielectric Material in Electrically Doped TFET: Proposal and Optimization”, Journal of Computational Electronics, vol. 16, no. 3, pp. 721-731, Jun. 2017. DOI: https://doi.org/10.1007/s10825-017-1019-2.
Dheeraj Sharma, Deepika Singh, Sunil Pandey, Shivendra Yadav, and P. N. Kondekar, “Comparative Analysis of Full-Gate and Short-Gate Dielectric Modulated Electrically Doped Tunnel-FET Based Biosensors", Superlattices and Microstructures, vol. 111, pp. 767-775, Jul. 2017, DOI: http://dx.doi.org/10.1016/j.spmi.2017.07.035.
Madhulika Verma, Sukeshni Tirkey, Shivendra Yadav, Dheeraj Sharma, and Dharmendra Singh Yadav, “Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor", Transaction on Electron Devices, vol. 64, no. 9, pp. 3841-3848, Sep. 2017, DOI: 10.1109/TED.2017.2732820.
Sukeshni Tirkey, Dheeraj Sharma, Dharmendra Singh Yadav, and Shivendra Yadav, “Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters", IEEE Transaction on Electron Devices, vol. 63, no. 9, pp. 3943-3950, Sep. 2017, DOI: 10.1109/TED.2017.2730922.
Mohd. Aslam, Shivendra Yadav, Deepak Soni, and Dheeraj Sharma, “A New Design Approach for Enhancement of DC/RF Performance with Improved Ambipolar Conduction of Dopingless TFET", Superlattices and Microstructures, vol. 112, pp. 86-96, Sep. 2017, DOI: http://dx.doi.org/10.1016/j.spmi.2017.09.017.
Deepak Soni, Dheeraj Sharma, Shivendra Yadav, Mohd. Aslam, and Neeraj Sharma, “Performance Improvement of Doped TFET by Using Plasma Formation Concept", Superlattices and Microstructures, vol. 113, pp. 97-109, Oct. 2017, DOI: https://doi.org/10.1016/j.spmi.2017.10.012.
Anju, Shivendra Yadav, and Dheeraj Sharma, “Assessment of Read and Write Stability for 6T SRAM Cell Based on Charge Plasma DLTFET", Superlattices and Microstructure, vol. 115, pp. 67-77, Dec. 2017, DOI: https://doi.org/10.1016/j.spmi.2017.12.061.
Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering - A Kumar, M Das, V Garg, BS Sengar, MT Htay, S Kumar, A Kranti, ... Applied Physics Letters 110 (25), Cited by: 92, Year: 2017
Impact of sputter-instigated plasmonic features in TCO films: for ultrathin photovoltaic applications - V Awasthi, V Garg, BS Sengar, SK Pandey, A Aaryashree, S Kumar, ... Applied Physics Letters 110 (10), Cited by: 18, Year: 2017
A detailed study on optical properties and defect states in Cd-free (Zn, Mg) O layer for photovoltaic application - V Garg, BS Sengar, R Singh, V Awasthi, S Kumar, VV Atuchin AIP Conference Proceedings, Cited by: 13, Year: 2017
Deepak Joshi, Satyabrata Dash, H. S. Jatana, Ratnajit Bhattacharjee, Gaurav Trivedi, “Analog circuit optimization using adjoint network based sensitivity analysis”, AEU - International Journal of Electronics and Communications, 2017. DOI: 10.1016/j.aeue.2017.08.053.
K. Sawangsri, P. Das, S. N. Supardan, I. Z. Mitrovic, S. Hall, R. Mahapatra, A. K. Chakraborty, R. Treharne, J. Gibbon, V. R. Dhanak, and K. Durose, P. R. Chalker, “Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications”, Microelectronic Engineering, v. 178, 2017, pp. 178-181, IF 2.523
Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact - R Singh, P Sharma, MA Khan, V Garg, V Awasthi, A Kranti, S Mukherjee Journal of Physics D: Applied Physics 49 (44), 445303, Cited by: 46, Year: 2016
Localized surface plasmon resonance on Au nanoparticles: tuning and exploitation for performance enhancement in ultrathin photovoltaics - V Garg, BS Sengar, V Awasthi, P Sharma, C Mukherjee, S Kumar, ... RSC Advances 6 (31), 26216-26226, Cited by: 45, Year: 2016
Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications - V Awasthi, SK Pandey, V Garg, BS Sengar, P Sharma, S Kumar, ... Journal of Applied Physics 119 (23), Cited by: 31, Year: 2016
Growth and characterization of dual ion beam sputtered Cu2ZnSn (S, Se) 4 thin films for cost-effective photovoltaic application - BS Sengar, V Garg, V Awasthi, S Kumar, C Mukherjee, M Gupta, ... Solar Energy 139, 1-12, Cited by: 30, Year: 2016
Analysis of interface states and barrier inhomogeneities in Ga-doped ZnO based Schottky diode - BS Sengar, R Singh, P Sharma, SK Pandey, V Awasthi, S Kumar, ... Superlattices and Microstructures 94, 159-170, Cited by: 14, Year: 2016
Detection of a high photoresponse at zero bias from a highly conducting ZnO: Ga based UV photodetector - P Sharma, R Singh, V Awasthi, SK Pandey, V Garg, S Mukherjee RSC Advances 5 (104), 85523-85529, Cited by: 25, Year: 2015
Growth and characterization of dual ion beam sputtered Al-doped ZnO thin films: impact of Al concentration on electro-optical properties - BS Sengar, V Garg, V Awasthi, S Kumar, M Gupta, S Mukherjee, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (4), 041507, Cited by: 16, Year: 2015

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